Vampires can Lean into trust: Checking proofs for Soundness

Bodingbauer, Jonas

Master Thesis (2026)

Supervisor: Laura Kovacs

Lean on Vampire proofs (Short Paper)

Jonas Bodingbauer, Márton Hajdu, Laura Kovács, Axel Polaczek, Michael Rawson

In review (2026)

First-principles screening of fluoride-based compounds for next-generation ultrathin gate dielectrics

B.J, D.W, C.W, T.G

In review (2025)

First-principles screening of fluoride-based compounds for gate dielectric applications

Bodingbauer, Jonas

Master Thesis, Technische Universitat Wien (2025)

Supervisor: Tibor Grasser, Dominc Waldhoer, Christoph Wilhelmer

A first-principles screening study of fluoride-based materials for gate dielectric use in advanced MOS technologies, focusing on dielectric performance and materials suitability.

System-level verification and testing of a safety-critical SoC using HW/SW Co-Simulation

Bodingbauer, Jonas

Bachelor Thesis, TU Wien / CERN (2022)

Supervisor: Andreas Steininger, Hamza Boukabache, Stefan Tauner

A hardware/software co-simulation verification approach for a safety-critical Zynq-7000 SoC used in CERN radiation monitoring electronics, including UVM-based constrained-random testbench concepts.

Stimulated Raman scattering in GaP, Si and Ge nanostructures

Bodingbauer, Jonas

Bachelor Thesis, TU Wien (2022)

Supervisor: Alois Lugstein

Within the framework of this thesis, the Raman scattering behavior of Gallium phosphide (GaP), Silicon (Si) and Germanium (Ge) nanostructures was experimentally examined. A confocal microscope with backscattering setup and a laser used as pumping light source with a wavelength of 532 nm were used to show Stimulated Raman scattering (SRS) on several samples. Furthermore, the temperature dependence of the Raman Stokes scattering intensity and Raman peak red-shifting for GaP, Si and Gallium arsenide (GaAs) has been determined in the temperature range from 20 C to 140 C. The findings in this thesis can be used for further research on nanoscale enhanced stimulated Raman scattering to enable monolithically integrable Raman lasers.